Numerical investigation of thermal stress and dislocation density in silicon ingot during a solidification process (2008)
Chen, Xuejiang,
Nakano, Satoshi,
Liu, Lijun,
Kakimoto, Koichi,
中野, 智,
柿本, 浩一,
...
A transient global model was used to obtain the solution of a thermal field within the entire furnace during a unidirectional solidification process for photovoltaics. The melt-solid interface shape...
一方向性凝固法による太陽電池用多結晶シリコンの酸素の混入経路の解明 (2008)
松尾, 整,
中野, 智,
新船, 幸二,
大下, 祥雄,
山口, 真史,
柿本, 浩一,
...
We studied the mechanism of oxygen transfer from a quartz crucible to a multicrystalline silicon during unidirectional solidifiation process. We investigated the boundary layer thickness of oxygen...