| Adhesion Between CVD Diamond Films and Tungsten. (1998) | |||||||||
Abstract | |||||||||
| Adhesion between diamond films synthesized by a CVD method and tungsten has been investigated by pull testing method. Diamond films have been deposited at temperatures from 1173 to 1323 K with a growth rate ranging from 0.2 to 0.45 micron/hour. The films are highly crystalline and are dominated by (100) faces at low temperatures, changing to (111) at higher temperatures. Grain size and residual stress in the films increase with increasing deposition temperature. X-ray diffraction shows the expected diamond diffraction peaks plus peaks attributed to WC and W2C. Raman spectroscopy shows a sharp diamond band for all of the films, with a small broad peak attributed to amorphous carbon. There is no distinct correlation between diamond/ amorphous carbon intensity with deposition temperature. Sebastion pull testing shows that the failure mode of the films correlates with deposition temperature, but specific adhesion strength values do not. | |||||||||
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