| Oxidation of CVD Diamond Films. (1998) | |||||||||
Abstract | |||||||||
| Thermal oxidation of CVD diamond films on 111 oriented silicon wafers in oxygen at atmospheric pressure and up to 1273 K was investigated by thermogravimetry. The data is compared with that of 100 and 111 oriented type IIa natural diamond wafers, natural diamond and graphite powders. As deposited diamond films on one side of a silicon wafer appear gray in color and turn black on oxidation. A free standing diamond film has a pale yellow color which is unaffected by oxidation. Extensive oxidation occurs by etching pits on the surfaces and edges of diamond grains. X-ray diffraction do not indicate transformation to non-diamond carbon forms. Raman spectroscopy indicates a decrease in the amount of non-diamond carbon on oxidation. Diamond films start to oxidize at a much lower temperature as compared to natural diamond and graphite powders. The rate of oxidation of diamond films is lower than the rates of oxidation of 111 and 100 oriented diamond wafers. The oxidation behavior is consistent with at least two reaction paths. | |||||||||
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