| Laboratory characterization of silicon avalanche photodiodes (APD) for pulse position modulation (PPM) detection (2006) | |||||||||||||
Abstract | |||||||||||||
| Two commercially available large area silicon avalanche photodiodes (APD) were characterized in the laboratory. Specifically, the response of the APD’s to a sequence of 8-bit pulse position modulated (256-PPM) laser pulses, with and without background noise, was recorded and stored for post analysis. Empirical probability distribution functions (pdf) were constructed from the signal and noise slot data and compared to pdf’s predicted by an analytical model based on Webb/Gaussian statistics. The limited pulse sequence was also used to generate bit-error rate (BER) versus signal photons per pulse values, albeit with large error bars. These BER measurements were also compared to results predicted using the Gaussian and Webb/Gaussian models for APD channel statistics. While the measurements qualitatively reflect features predicted by theory, significant quantitative deviations are displayed between the measurements and theory. The source of these discrepancies is not currently well understood, but it is surmised that inaccurate knowledge of detector parameters such as gain and noise equivalent temperature models may explain the discrepancies. | |||||||||||||
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