| Recording of Cell Action Potentials with AlGaN/GaN Field-Effect Transistor Arrays (2005) | |||||||||||
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| APPLIED PHYSICS LETTERS Recording cell action potentials with AlGaN GaN eld effect transistors Georg Steinhoff and Barbara Baur Walter Schottky Institut Technische Universit nchen Coulombwall Garching Germany nter Wrobel Sven Ingebrandt and Andreas Offenh usser Institut Schichten und Grenz chen ISG Forschungszentrum lich Leo Brandt Stra lich Germany Armin Dadgar and Alois Krost Otto von Guericke Universit Madgeburg Abteilung Halbleiterepitaxie Postfach Magdeburg Germany Martin Stutzmann and Martin Eickhoffa Walter Schottky Institut Technische Universit nchen Coulombwall Garching Germany Received September accepted November published online January AlGaN GaN electrolyte gate eld effect transistor array for the detection electrical cell signals has been realized The low frequency noise power spectral density these devices exhibits characteristic with dimensionless Hooge parameter The equivalent gate input noise under operation conditions has peak peak amplitude one order magnitude smaller than for common silicon based devices used for extracellular recordings Extracellular action potentials from con uent layer rat heart muscle cells cultivated directly the nonmetallized gate surface were recorded with signal amplitude and signal noise ratio American Institute Physics DOI Recording electrical activity cells with planar device arrays promising approach for the study biological networks well for the realization whole cell biosensors which cultured cells act the biological receptor | |||||||||||
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