| Single cell recordings with pairs of complementary transistors (2006) | |||||||||||
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| APPLIED PHYSICS LETTERS Single cell recordings with pairs complementary transistors Sven Meyburg nter Wrobel Regina Stockmann rgen Moers Sven Ingebrandt and Andreas Offenh ussera Institute Bio and Nanosystems and Center Nanoelectronic Systems for Information Technology CNI Research Center lich lich Germany Received April accepted May published online July Floating gate eld effect transistors FETs for the detection extracellular signals from electrogenic cells were fabricated complementary metal oxide semiconductor process Additional passivation layers protected the transistor gates from the electrolyte solution compare the signals from and FETs two electronically separated but locally adjacent transistors were combined one measuring unit The paired sensing area this unit had the dimension single cell Simultaneous recordings with and channel oating gate FETs from single cell exhibited comparable amplitudes and identical time courses The experiments indicate that both types FETs express similar sensitivities American Institute Physics DOI Recording extracellular electrical activity from living cells with semiconductor devices powerful tool that holds great promise for biomedical and neuroelectronic applications well for the development whole cell biosensors contrast classical electrophysiological methods these devices allow stable long term noninvasive recordings electrical activity from single cells networks cells with multiple recording sites For extracellular recordings two | |||||||||||
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