| Origin of noise in AlGaN/GaN heterostructures in the range of 10-100 MHz (2006) | |||||||||||
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| JOURNAL APPLIED PHYSICS Origin noise AlGaN GaN heterostructures the range MHz Vitusevich Danylyuk Kurakin Klein and Offenh usser Institut Schichten und Grenzf chen and Center Nanoelectronic Systems for Information Technology CNI Forschungszentrum lich lich Germany Petrychuk Taras Shevchenko National University Kiev Ukraine Belyaev Lashkaryov Institute Semiconductor Physics NASU Kiev Ukraine Received July accepted February published online April report the noise origin AlGaN GaN heterostructures for the frequency range MHz High electron mobility transistor heterostructures were designed for high power and high frequency application and grown SiC substrates The structures were patterned with Ohmic transmission line model and micrometer working distances contacts and were analyzed using characteristics and noise gure measurements Different possible mechanisms noise origin were considered and investigated detail The results our analysis show that the thermal noise and hot carrier noise play minor role the structure the investigated frequency range the same time dominant generation recombination noise revealed Moreover two different components noise are found demonstrating different temperature dependences and result different physical origins the noise are established detailed analysis potential pro les the structure calculated self consistently for several voltages allows propose physical model for the observed noise behavior The uctuations electron concentration the rst quantum | |||||||||||
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