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Photodetector structures for standard CMOS imaging applications (2007)

Abstract

In this investigation we show how a standard 0.5µm twin-well CMOS process can be used for CMOS imaging. The process features a single-polysilicon layer, as well as three metal layers, and it is LOCOS based. We discuss various issues affecting photodetection tasks in CMOS imaging applications and present an extensive study of possible photodetector structures. Also, we propose a novel CMOS imaging pixel structure, which exceeds the standard CMOS 2-D imaging performance.

Publication details

Repository	Fraunhofer Publica (Germany)
Keywords	CMOS imaging, standard CMOS pixel structure, 0.5µm CMOS progress imaging possibility, time-compression charge injection photogate, electrically coupled photodiode, global-shutter readout
Type	Conference Paper
Language	english
Relation	Begueret, J.-B.: PRIME 2007, 3rd Conference on Ph.D. Research in Microelectronics and Electronics. Proceedings: July 2-5, 2007, Bordeaux. New York, NY: IEEE, 2007, pp. 193-196