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SOI pixel detector based on CMOS time-compression charge-injection (2007)

Abstract

Concept and experimental results obtained from a pixel detector based on CMOS Time-Compression Charge-Injection-Devices (TC-CID) with a huge internal photocurrent amplification (~104), fabricated in CMOS Silicon-On-Insulator (SOI)technology are presented. Here, the readout circuitry is fabricated on highly-doped, 200nm thick SOI film, while the photogate (PG) detector is fabricated on higher-resistivity handle wafer. The latter, together with the 30V biasing possibilities enhanced the quantum efficiency, especially for irradiations with wavelengths in the near-infra-red (NIR) part of the spectra.

Publication details

Repository	Fraunhofer Publica (Germany)
Keywords	CMOS imaging, SOI based charge-injection pixel, time-compression charge-injection devices, TC-CID, SOI high-voltage CMOS process imaging
Type	Conference Paper
Language	english
Relation	Institute of Electrical and Electronics Engineers -IEEE-: ECCTD 2007,18th European Conference on Circuit Theory and Design: August 26-30, Sevilla, Spain. New York, NY: IEEE, 2007, pp. 946-949