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Colossal Positive Magnetoresistance in a Doped Nearly Magnetic Semiconductor (2008)

Abstract
We report on a positive colossal magnetoresistance (MR) induced by metallization of FeSb$_{2}$, a nearly magnetic or "Kondo" semiconductor with 3d ions. We discuss contribution of orbital MR and quantum interference to enhanced magnetic field response of electrical resistivity.. Comment: 5 pages, 5 figures

Publication details
Download http://arxiv.org/abs/0801.1354
Repository arXiv (United States)
Keywords Condensed Matter - Strongly Correlated Electrons, Condensed Matter - Materials Science
Type text