| A SIMPLIFIED MODEL FOR THE DEPOSITION KINETICS OF GD a-Si : H FILMS (1981) | |||||||||||||||
Abstract | |||||||||||||||
| We propose a simplified model for the deposition kinetics of GD a-Si : H as well as a-Si : F : H films taking into account a dissociation energy of a chemical bond of diatomic molecules. The model explains successfully (1) the reason why no film is deposited from the pure SiF4 glow discharge and (2) a strong correlation between an emission intensity ratio of [H]/[SiH] in a plasma and an ir absorption ratio of dihydride to monohydride modes of a deposited film. | |||||||||||||||
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