| RESPECTIVE ROLES OF IMPURITIES AND DEFECTS IN Al/Ga INTERDIFFUSION IN ION IMPLANTED GaAs-AlxGa1-xAs SUPERLATTICES (1987) | |||||||||||||||
Abstract | |||||||||||||||
| The influence of implant damage, seperated from impurity change associated effects, has been investigated on Al/Ga interdiffusion. Implants of electrically inactive isoelectronic elements 31P+ and 27Al+ were performed in molecular beam epitaxy grown (MBE) GaAs-Al0.3Ga0.7As superlattices (SLs) at two distinct temperatures (25°C and 250°C) to generate different damage densities. Their properties, before and after anneals at 850°C for periods up to 6 h, were evaluated using several characterization techniques. An unambiguous evidence to the implant damage and anneal duration dependent Al/Ga interdiffusion is presented and discussed. | |||||||||||||||
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