| Characterization of white light emitting diodes based ZnO nano structures grown on p-Si (2008) | |||||||||||||||
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| In this paper ZnO nanorods and nanodots (with and without a SiO2 buffer layer) were grown on p-Si, forming p-n heterojunctions. The nanorods devices showed no electroluminescence (EL) emission but a rectifying behavior with a breakdown voltage around -4V. The nanodot devices showed EL emission under forward bias conditions. The buffer layer increased both the stability and efficiency of the devices. With the buffer layer EL emission was also observed under reverse bias. | |||||||||||||||
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