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Single Carbon Nanotube Transistor at GHz Frequency (2008)

Abstract
We report on microwave operation of top-gated single carbon nanotube transistors. From transmission measurements in the 0.1-1.6 GHz range, we deduce device transconductance gm and gate-nanotube capacitance Cg of micro- and nanometric devices. A large and frequency-independent gm of about 20 microSiemens is observed on short devices, which meets the best dc results. The capacitance per unit gate length of 60 aF/micrometer is typical of top gates on a conventional oxide with a dielectric constant equal to 10. This value is a factor of 3-5 below the nanotube quantum capacitance which, according to recent simulations, favors high transit frequencies . For our smallest devices, we find a large transit frequency equal to 50 GHz with no evidence of saturation in ngth dependence.

Publication details
Download http://hal.archives-ouvertes.fr/hal-00272200/en/
Publisher HAL - CCSD
Repository INRIA a CCSD electronic archive server based on P.A.O.L (France)
Keywords Physics/Condensed Matter/Mesoscopic Systems and Quantum Hall Effect
Type peer-reviewed article
Language English
Relation http://hal.archives-ouvertes.fr/docs/00/27/22/00/PDF/Chaste_GHz-CNT-FET_NanoLetters_Resub.pdf