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Sensors for the CDF Run2b silicon detector (2004) |
- Akimoto, T.,
- Aoki, M.,
- Azzi, P.,
- Bacchetta, N.,
- Behari, S.,
- Benjamin, D.,
- Bisello, D.,
- Bolla, G.,
- Booth, P.,
- Bortoletto, D.,
- Burghard, A.,
- Busetto, G.,
- Cabrera, S.,
- Canepa, A.,
- Cardoso, G.,
- Chertok, M.,
- Ciobanu, C. I.,
- Cooke, P.,
- Derylo, G.,
- Fang, I.,
- Feng, E. J.,
- Fernandez, J. P.,
- Flaugher, B.,
- Freeman, J.,
- Galtieri, L.,
- Galyardt, J.,
- Garcia-Sciveres, M.,
- Giurgiu, G.,
- Gorelov, I.,
- Haber, C.,
- Hale, D.,
- Hara, K.,
- Harr, R.,
- Hill, C.,
- Hoeferkamp, M.,
- Hoff, J.,
- Holbrook, B.,
- Hong, S. C.,
- Hrycyk, M.,
- Hsiung, T. H.,
- Incandela, J.,
- Jeon, E. J.,
- Joo, K. K.,
- Junk, T.,
- Kahkola, H.,
- Karjalainen, S.,
- Kim, S.,
- Kobayashi, K.,
- Kong, D. J.,
- Krieger, B.,
- Kruse, M.,
- Kyre, S.,
- Lander, R.,
- Landry, T.,
- Lauhakangas, R.,
- Lee, J.,
- Lu, R. S.,
- Lujan, P. J.,
- Lukens, P.,
- Mandelli, E.,
- Manea, C.,
- Maksimovic, P.,
- Merkel, P.,
- Min, S. N.,
- Moccia, S.,
- Nakamura, Y.,
- Nakano, I.,
- Naoumov, D.,
- Nelson, T.,
- Nord, B.,
- Novak, J.,
- Okusawa, T.,
- Orava, R.,
- Orlov, Y.,
- Osterberg, K.,
- Pantano, D.,
- Pavlicek, V.,
- Pellett, D.,
- Pursley, J.,
- Riipinen, P.,
- Schuyler, B.,
- Seidel, S.,
- Shenai, A.,
- Soha, A.,
- Stuart, D.,
- Tanaka, R.,
- Tavi, M.,
- Walder, J. P.,
- Wang, Z.,
- Watje, P.,
- Weber, M.,
- Wester, W.,
- Yamamoto, K.,
- Yang, Y. C.,
- Yao, W.,
- Yao, W.,
- Yarema, R.,
- Yoshitama, H.,
- Yun, J. C.,
- Zetti, F.,
- Zimmerman, T.,
- Zimmermann, S.,
- Zucchelli, S.
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Abstract |
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We describe the characteristics of silicon microstrip sensors fabricated by Hamamatsu Photonics; for the CDF Run 2b silicon detector. A total of 953 sensors, including 117 prototype sensors, have been produced and tested. Five sensors were irradiated with neutrons up to 1.4 x 10(14) n/cm(2) as a part of the sensor quality assurance program. The electrical and mechanical characteristics are found to be superior in all aspects and fulfill our specifications. We comment on charge-up susceptibility of the sensors that employ a crystal structure. |
Publication details |
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