| Fully Depleted Charge-Coupled Devices (2006) | |||||||||||
Abstract | |||||||||||
| We have developed fully depleted, back-illuminated CCDs that build upon earlier research and development efforts directed towards technology development of silicon-strip detectors used in high-energy-physics experiments. The CCDs are fabricated on the same type of high-resistivity, float-zone-refined silicon that is used for strip detectors. The use of high-resistivity substrates allows for thick depletion regions, on the order of 200-300 um, with corresponding high detection efficiency for near-infrared andsoft x-ray photons. We compare the fully depleted CCD to thep-i-n diode upon which it is based, and describe the use of fully depleted CCDs in astronomical and x-ray imaging applications. | |||||||||||
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