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A model analysis of feature profile evolution and microscopic uniformity during polysilicon gate etching in Cl-2/O-2 plasmas (2006)

Publication details

Download	http://hdl.handle.net/2433/35781
Publisher	INST PURE APPLIED PHYSICS
Repository	Kyoto University Research Information Repository (KURENAI) ()
Keywords	electron-cyclotron-resonance plasma etching, silicon etching, chlorine chemistries, Monte Carlo simulation, feature profile evolution, etch anisotropy, microscopic uniformity, passivation layers
Type	Journal Article
Language	English
Relation	10.1143/JJAP.45.8157