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Equation for internal quantum efficiency and its temperature dependence of luminescence, and application to InxGa1-xN/GaN multiple quantum wells (2006)

Sasaki, A,
Shibakawa, S,
Kawakami, Y,
Nishizuka, K,
Narukawa, Y,
Mukai, T

Publication details

Download	http://hdl.handle.net/2433/35844
Publisher	INST PURE APPLIED PHYSICS
Repository	Kyoto University Research Information Repository (KURENAI) ()
Keywords	internal quantum efficiency, carrier recombination lifetime, photoluminescence, InGaN/GaN MQWs
Type	Journal Article
Language	English
Relation	10.1143/JJAP.45.8719