| Microstructure, crystallinity, and properties of low-pressure MOCVD-grown europium oxide films (2008) | |||||||||
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| A study of growth, structure, and properties of $Eu_2O_3$ thin films were carried out. Films were grown at $500-600^o C$ temperature range on Si(100) and fused quartz from the complex of $Eu(acac)_3$. Phen by low pressure metalorganic chemical vapor deposition technique which has been rarely used for $Eu_2O_3$ deposition.These films were polycrystalline. Depending on growth conditions and substrates employed, these films had also possessed a parasitic phase. This phase can be removed by post-deposition annealing in oxidizing ambient. Morphology of the films was characterized by well-packed spherical mounds. Optical measurements exhibited that the bandgap of pure $Eu_2O_3$ phase was 4.4 eV. High frequency 1MHz capacitance–voltage (C–V) measurements showed that the dielectric constant of pure $Eu_2O_3$ film was about 12. Possible effects of cation and oxygen deficiency and parasitic phase on the optical and electrical properties of $Eu_2O_3$ films have been briefly discussed. | |||||||||
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