| High-mobility molybdenum doped indium oxide thin films prepared by spray pyrolysis technique (2008) | |||||||||
Abstract | |||||||||
| Molybdenum doped indium oxide (IMO) thin films were deposited on the glass substrates preheated to 450°C by spray pyrolysis technique.The Mo doping was varied between 0 and 2.0 at.%. The films were characterized by their structural, electrical and optical properties. The films are confirmed to be cubic bixbyite $In_2o_3$ with a strongest orientation along (222) plane, which is shifted to (400) plane for the increase in Mo doping to 1.25 and 2 at.%. The film deposited with 0.5 at.% Mo doping shows high mobility of 76.9 $cm^2V^{-1}s^{-1}$, resistivity of $1.8\times10^{-3}\Omega-cm$ and high carrier concentration of $4.6\times10^{19}$ $cm^{-3}$ with 81.3% transmittance in the visible range between 500 and 800 nm. Further, the transparency extents well into the near-IR range. | |||||||||
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