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High sensitive UV-enhanced linear CMOS photosensor (2008)

Abstract
This contribution describes a highly sensitive UVenhanced linear CMOS photosensor which exhibits very low noise. The sensor features on-chip readout and control electronics, global synchronous shutter, programmable spectral responsivity, clock-independent variable integration time, two different acquisition modes, selectable region-of-interest readout, and a binning capability. The device has been designed and fabricated in the 0.5?m standard CMOS process available at the Fraunhofer IMS.

Publication details
Repository Fraunhofer Publica (Germany)
Type Conference Paper
Language english
Relation Institute of Electrical and Electronics Engineers -IEEE-: ESSDERC and ESSCIRC 2008. CD-ROM: Inklusive Fringe Poster Session, 15 - 19 September 2008, Edinburgh. Bristol: IOP Publishing, 2008, pp. 118-120