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THE EFFECT OF RARE-EARTH IMPURITY ON THE PHOTODARKENING RELAXATION IN AS-EVAPORATED AMORPHOUS As2Se3:Pr AND As2Se3:Dy FILMS (2002)

Abstract
The effect of foreign impurity atoms (Dy and Pr) in as-evaporated amorphous As2Se3 thin films on the photodarkening relaxation was investigated. The photodarkening amplitude depends on the kind and concentration of rare-earth dopant, as well as on the thickness of the sample. The observed variation of photodarkening amplitude with the sample thickness is due on the amount of absorbed photons generating the photodarkening effect. The photodarkening kinetics is described by a stretched exponential function with the dispersion parameter αααα   0.5, which indicates high dispersion of the relaxation process in untreated as-deposited chalcogenide films.

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Download http://citeseerx.ist.psu.edu/viewdoc/summary?doi=?doi=10.1.1.119.7094
Source http://www.ececs.uc.edu/~pboolcha/papers/2002/Joam Iovu 2002.pdf
Contributors CiteSeerX
Repository CiteSeerX - Scientific Literature Digital Library and Search Engine (United States)
Keywords Amorphous thin films, Photodarkening, Rare-earth ions
Type text
Language English