| Characteristics of Irradiated Silicon Microstrip Detectors with (2007) | |||||||||||||||
Abstract | |||||||||||||||
| In a program of developing radiation-hard silicon sensors for the LHC-ATLAS experiment, wehave irradiated various types of silicon sensors with 12-GeV protons at KEK, and made a comparative study, among the other properties, of characteristics of the sensors with twowafer planes h111i and h100i. The studied sensors are p-onn type, which satisfy the ATLAS-SCT specifications. Possible dependence on the substrate orientation could result from different dangling-bond configurations. The compared characteristics are the charge collection efficiency,interstrip capacitance, and noise levels measured with a real ATLAS-SCT electronics system. A substantial difference is observed in the interstrip capacitance at 10 kHz, while the difference is small at ?1 MHz. Also the differences in the charge collection efficiency and in the noise levels appear to be small. Key words: silicon microstrip detector; radiation damage; wafer direction; h111i; h100i;charge collection; interstrip capacitance; ATLAS... | |||||||||||||||
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