| One-Step Patterning of Asymmetric Gate Recess for InP HEMTs using Genetic Algorithms (2008) | |||||||||||||
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| For the first time, a canonical genetic algorithm was used to optimize the resist profiles for T-gate fabrication. An e-beam lithography simulation tool was elaborated that calculates the two-dimensional resist profile as a function of the electron dose. A resist profile was optimized for asymmetric gate recess fabrication of InP HEMTs to enhance the breakdown voltage. | |||||||||||||
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