| A 200 × 200 CCD Image Sensor Fabricated On High-Resistivity Silicon (2007) | |||||||||||||
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| A charge coupled device (CCD) image sensor fabricated on high-resistivity silicon is described. The resistivity, about 10,000 \Omega\Gamma000 allows for operation of the CCD with the entire 300 ¯m substrate depleted. This results in better red to near infrared response when compared to conventional and thinned CCDs. In addition the CCD has good blue response when back illuminated. Since the substrate is fully depleted, thinning, with its inherent difficulties, is not necessary in order to enhance blue response. 1. Introduction Scientific imaging applications using charge-coupled devices often require photon detection with good quantum efficiency over a broad spectral range. CCDs that are illuminated at the front side of the device have poor quantum efficiency in the blue region of the visible light spectrum due to the strong absorption of short wavelength photons in the polycrystalline silicon gates. The blue response can be improved significantly by thinning the CCD substrate to a t... | |||||||||||||
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