| Transistors with Dual Work Function Metal Gates by Single Full Silicidation (FUSI) of Polysilicon (2002) | |||||||||||||||
Abstract | |||||||||||||||
| Metal gate electrodes with two different work functions, ~4.5 and ~4.9 eV for NMOS and PMOS, respectively, were obtained by single-step full silicidation of poly gates. Reduction of polysilicon depletion was ~0.25 nm. Pile-up of arsenic at the NMOS dielectric is believed responsible for NiSi work function modification. Metal gate may offer little or no gate current reduction for the same T oxinv as poly gate. | |||||||||||||||
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