| Manipulating exciton fine structure in quantum dots with a lateral electric field (2007) | |||||||||||||||
Abstract | |||||||||||||||
| The fine structure of the neutral exciton in a single self-assembled InGaAs quantum dot is investigated under the effect of a lateral electric field. Stark shifts up to 1.5 meV, an increase in linewidth, and a decrease in photoluminescence intensity were observed due to the electric field. The authors show that the lateral electric field strongly affects the exciton fine-structure splitting due to active manipulation of the single particle wave functions. Remarkably, the splitting can be tuned over large values and through zero.. The authors acknowledge financial support for this work from SANDIE (EU), EPSRC (UK), (ES) MEC, and CAM (TEC-2005-05781-C03-01, NAN2004-09109-C04-001, QOIT CSD2006-0019, and S-505/ESP/000200) and DAAD (DE).. Peer reviewed | |||||||||||||||
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