| pMOSFET with 200% mobility enhancement induced by multiple stressors (2006) | |||||||||||||||
Abstract | |||||||||||||||
| Recessed Si0.8Ge0.2 source/drain (S/D) and a compressive contact etch-stop layer have been successfully integrated resulting in nearly 200% improvement in hole mobility. This is the largest reported process-induced hole mobility enhancement to the authors' knowledge. This letter demonstrates that a drive-current improvement from recessed Si0.8Ge0.2 plus the compressive nitride layer are in fact additive. Furthermore, it shows that the mobility enhancement is a superlinear function of stress, leading to larger than additive gains in the drive current when combining several stress sources. | |||||||||||||||
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