| ION-SENSITIVE FIELD-EFFECT TRANSISTORS WITH INORGANIC GATE OXIDE FOR PH SENSING (1982) | |||||||||||||
Abstract | |||||||||||||
| Ion-sensitive fieldeffect transistors (ISFET’s) have been fabricated by using silicon fiims on sapphire substrates (SOS). Using this structure Si02, Zr02, and TazO5 films are examined as hydrogenion- sensitive materials, and TazO5 fiim has been found to have the highest pH sensitivity (56 mV/pH) among them. The measured pH sensitivity of this SOS-ISFET’s is compared with the theoretical sensitivity based on the site-binding model of proton dimciation reaction on the metal oxide f i i and good agreement between them is obtained. | |||||||||||||
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