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Hemt structures and technology on GAAS and inp for power amplification in millimetre wave range (2001)

Abstract

The paper introduces a simple and efficient approach for the modelling of low-frequency dispersive phenomena in FETs. It is based on the definition of a virtual, non-dispersive associated device controlled by equivalent port voltages and it is suitable for modelling based on standard nonlinear dynamic approaches, such as lumped-element equivalent circuits. The proposed approach is justified on the basis of a physically-consistent, charge-controlled description of the device, but the results are general and provide a valuable tool for taking into account dispersive effects in FETs by means of an intuitive circuit solution, in the framework of any existing nonlinear dynamic model of the associated non-dispersive device. The new equivalent-voltage description, identified on the basis of conventional measurements carried out under static and small-signal dynamic operating conditions, allows for the accurate prediction of dispersive effects above the frequency cut-off, but the formulation is still compatible, without for al modification, for the modelling of the device behaviour under signal excitations having spectral components in the dispersive low-frequency range. Preliminary results are presented which conferm the validity of the proposed approach.

Publication details

Download	http://amsacta.cib.unibo.it/archive/00000063/
Publisher	Microwave engineering Europe
Repository	AMS Acta (Italy)
Keywords	ING-INF/01 Elettronica
Type	Documento relativo ad un convegno o altro evento
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