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0.12 µm GATE LENGTH In0.52Al0.48As/In0.53Ga0.47As HEMTs on transferred substrate (2001)

Abstract

New In0.52Al0.48As/In0.53Ga0.47As transferred-substrate high electron mobility transistors (TS-HEMTs) have been successfully fabricated on 2 inch Silicon substrate with 0.12 µm T-shaped gate length. These new TS-HEMTs exhibit typical drain currents of 450 mA/mm and extrinsic transconductance up to 770 mS/mm. An extrinsic current cutoff frequency fT of 185 GHz is obtained. That result is the first reported for In0.52Al0.48As/In0.53Ga0.47As TS-HEMTs on Silicon substrate.

Publication details

Download	http://amsacta.cib.unibo.it/archive/00000077/
Publisher	Microwave engineering Europe
Repository	AMS Acta (Italy)
Keywords	ING-INF/01 Elettronica
Type	Documento relativo ad un convegno o altro evento
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