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HEMT's Design for Applications beyond 100GHz (2002)

Abstract

HEMT Design for Applications beyond GHz Bollaert Parenty Wallart Happy Dambrine Cappy Institut Electronique Microelectronique Nanotechnologies UMR CNRS partement Hyperfr quences Semiconducteurs Cit Scientifique Avenue Poincar Villeneuve Ascq Cedex France sylvain bollaert iemn univ lille Introduction Electronics GHz have applications atmospheric sensing radio astronomy passive imaging applications wide band communication systems Millimeter Wave MMW analog and numerical circuits have developed HEMTs InP substrate are largely used band GHz and band GHz circuits Improvement frequency operation has been obtained reduction gate length nanometer values and higher Indium content Another field application induced the demand higher bit rate communication which rapidly growing Gbit system has been recently developed and intensive research Gbit and Gbit being done Analog and numerical circuits used such optical transmission systems can also realized with nanometer gate length InP based HEMTs With InP based HEMTs possible reach higher than GHz with nanometer gate length obtain that good value gate recess undercut has been optimized Cutoff frequency important parameter particularly for numerical circuits However reduction gate length will involve increase short channel effects This point will limit the maximum oscillation frequency fmax and microwave performance analog circuits avoid this effect layer structure has correctly designed for sub nanometer gate length HEMTs this paper present o

Publication details

Download	http://amsacta.cib.unibo.it/archive/00000131/
Publisher	Microwave engineering Europe
Repository	AMS Acta (Italy)
Keywords	ING-INF/01 Elettronica
Type	Documento relativo ad un convegno o altro evento
Relation	http://amsacta.cib.unibo.it/archive/00000131/01/GaAs_3F_Bollaert.pdf [1] S. Weinreb et al, "Full-waveguide band 90 to 140 GHz, MMIC amplifier module", IEEE MTT-S Digest 1997, pp.1279-1280 [2] C. Probanz et al, "A High-Gain Monolithic D-band InP HEMT Amplifier", GaAs IC 98, pp. 41-44 [3] H. Wang et al,“ A 155-GHz Monolithic Low-Noise Amplifier “, IEEE Trans. On Microwave Theory and Techniques, vol. 46, NO. 11, pp.1660-1666, NOVEMBER 1998 [4] D.L. Edgar et al, "94 and 150GHz coplanar waveguide MMIC amplifiers realized using InP technology“, IEEE MTT-S Digest 1999. [5] M. Nishimoto et al, “ High performance D-band (118 GHz) monolithic low-noise amplifier“, IEEE MTT-S Digest 1999 [6] R. Lai et al, “ InP HEMT Amplifier Development for g-band (140-220 GHz) Applications “, IEDM 2000 [7] C. Pobanz et al, “ High Performance MMICs with Submillimeter Wave InP-based HEMTs “, IPRM 2000, pp. 67-70 [8] R. Raja et al,“ A 183 GHz low noise amplifier module with 5.5 dB noise figure for the conical-scanning microwave imager sounder (CMIS) program “, IEEE MTT-S Digest 2001 [9] T. Enoki, Y. Ishii, “InP-Based HEMT Technologies for High-Speed ICs”, URSI’ 99. [10] D. Xu et al, "Depletion and enhancement mode modulation field effect transistor for ultra-high speed applications: an electrochemical fabrication technology", IEEE transactions on electron devices, vol.47, n°1, January 2000. [11] K. Shinohara et al, "Importance of gate recess structure to the cutoff frequency of ultra-high-speed InGaAs/InAlAs HEMTs", IPRM2002, pp.451-454. [12] J. Mateos et al, “Design Optimisation of Ultra-Short Gate HEMTs Using Monte Carlo Simulation” GAAS 2000, pp.624-627. [13] M. Urtega et al, “ 185 GHz Monolithic Amplifier in InGaAs/InAlAs Transferred-Substrate HBT Technology “, IEEE MTT-S Digest 2001 [14] S. Bollaert et al, "0.12µm Transferred-Substrate InAlAs/InGaAs HEMTs on Silicon Wafer", IEEE Electron Device Letters, vol. 25, n°2, February 2002. [15] L. D. Nguyen et al, "Ultra-high speed modulation doped field effect transistor: a tutorial review", Proceeding of the IEEE, vol. 80, n°4, April 1992,pp. 494-518.

Cited publications (1)

High Performance MMICs with Submillimeter Wave InP-based HEMTs (2004)