| Ballistic devices based on T-Branch Junctions and YBranch Junctions on GaInAs/AlInAs heterostructures (2004) | |||||||||||
Abstract | |||||||||||
| We present processes for building passive and active ballistic devices. A 2D Monte Carlo simulator was used to optimize these devices. We present also the study of the transition between ballistic and ohmic transport in T-Branch Junctions (TBJs) at room temperature by using DC characterization. Then we show experimental results for YBranch Junctions (YBJs) compared with Monte Carlo Simulations. | |||||||||||
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