| Low energy ultrafast switching in silicon wire waveguides (2005) | |||||||||
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| 1.9ps optical switching at 40GHz repetition rate has been successfully demonstrated in submicron-size silicon wire waveguides. Ultrafast operation is achieved by induced optical absorption from two-photon absorption (TPA) process. The device requires very low energy, less than 3pJ, to accomplish 92% of modulation depth. | |||||||||
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