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Electrical characteristics of silicon pixel detectors (2002) |
- Gorelov, I.,
- Gorfine, G.,
- Hoeferkamp, M.,
- Mata-Bruni, V.,
- Santistevan, G.,
- Seidel, S.C.,
- Ciocio, A.,
- Einsweiler, K.,
- Emes, J.,
- Gilchriese, M.,
- Joshi, A.,
- Kleinfelder, S.,
- Marchesini, R.,
- McCormack, F.,
- McCormack, F.,
- McCormack, F.,
- Palaio, N.,
- Pengg, F.,
- Richardson, J.,
- Zizka, G.,
- Ackers, M.,
- Comes, G.,
- Fischer, P.,
- Keil, M.,
- Martinez, G.,
- Peric, I.,
- Runolfsson, O.,
- Stockmanns, T.,
- Treis, J.,
- Wermes, N.,
- Gossling, C.,
- Hugging, F.,
- Hugging, F.,
- Hugging, F.,
- Krasel, O.,
- Wustenfeld, J.,
- Wunstorf, R.,
- Barberis, D.,
- Beccherle, R.,
- Caso, C.,
- Cervetto, M.,
- Darbo, G.,
- Gagliardi, G.,
- Gemme, C.,
- Morettini, P.,
- Nechaeva, P.,
- Osculati, B.,
- Rossi, L.,
- Rossi, L.,
- Rossi, L.,
- Fasching, D.,
- Blanquart, L.,
- Breugnon, P.,
- Calvet, D.,
- Clemens, J.C.,
- Delpierre, P.,
- Hallewell, G.,
- Laugier, D.,
- Mouthuy, T.,
- Rozanov, A.,
- Valin, I.,
- Andreazza, A.,
- Caccia, M.,
- Citterio, M.,
- Lari, T.,
- Lari, T.,
- Lari, T.,
- Ragusa, F.,
- Troncon, C.,
- Vegni, G.,
- Lutz, G.,
- Richter, R.H.,
- Rohe, T.,
- Boyd, G.R.,
- Skubic, P.L.,
- Sicho, P.,
- Tomasek, L.,
- Vrba, V.,
- Holder, M.,
- Ziolkowski, M.,
- Cauz, D.,
- Cobal-Grassmann, M.,
- D'Auria, S.,
- De Lotto, B.,
- Del Papa, C.,
- Grassmann, H.,
- Santi, L.,
- Becks, K.H.,
- Lenzen, G.,
- Linder, C.
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Abstract |
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Prototype sensors for the ATLAS silicon pixel detector have been electrically characterized. The current and voltage characteristics, charge-collection efficiencies, and resolutions have been examined. Devices were fabricated on oxygenated and standard detector-grade silicon wafers. Results from prototypes which examine p-stop and standard and moderated p-spray isolation are presented for a variety of geometrical options. Some of the comparisons relate unirradiated sensors with those that have received fluences relevant to LHC operation. |
Publication details |
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