| Modeling of a-Si : H deposition in a DC glow discharge reactor (1992) | |||||||||
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| PECVD reactors are increasingly used for the manufacturing of electronic components. This paper presents a reactor-indelfoithe deposition of amorphous hydrogenated silicon in a dc glow discharge of Ar-Si I-la. The parallel-plate configuration is used in this study. Electron and positive ion densities have been cilculated in a self-consistent way. A macroscopic description that is based on the Bolkmann equation with forward scattering is used to calculate the ionization rate. The dissociation rare constant of SiHl requires knowledge about the electron energy distribution function. Maxwell and Druyvesteyn distributions are compared and [he numerical results show that the deposition rare is lower for the Druyvesteyn distribution. The plasma chemistry model includes silane, silyl, silylene, disilane, hydrogen, and atomic hydrogen. The sensilivity of the deposition rate toward [he branching ratios SiH; and SiHz as well as tIz and H during silyl dissociation is ex:lmined. Further parameters that are considered in the sensitivity analysis include anodeicathude temperatures, pressure, applied vollage, gip disuancc, gip length, molir fraction of SiH,, and How speed. This work offers insight in10 thc effects of :l11 design and control variables. | |||||||||
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