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Electrical characteristics of silicon pixel detectors (2002)

Abstract
Prototype sensors for the ATLAS silicon pixel detector have been electrically characterized. The current and voltage characteristics, charge-collection efficiencies, and resolutions have been examined. Devices were fabricated on oxygenated and standard detector-grade silicon wafers. Results from prototypes which examine p-stop and standard and moderated p-spray isolation are presented for a variety of geometrical options. Some of the comparisons relate unirradiated sensors with those that have received fluences relevant to LHC operation.

Publication details
Download http://edoc.mpg.de/193898
Repository Max Planck Society - eDocument Server (Germany)
Type Article