| Amorphous silicon as a resist material (1988) | |||||||||||
Abstract | |||||||||||
| Lithographic properties of amorphous silicon films exposed to glow-discharge hydrogen plasma and ion beams have been investigated. The rate of film etching by a CF4 plasma is lowered by exposure, giving rise to a negative resist behavior of the material. The sensitivity and contrast are ~1018 ions/cm2 and 1.1, respectively. The effect of exposure time on etching characteristics was also studied | |||||||||||
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