Scientific Commons: A. Arbouet

Charging dynamics of localized 2D layers of Si nanocrystals embedded into SiO2 by stencil masked ultra low energy ion implantation process (2008)

Dumas, C., Grisolia, J., Carrey, J., Arbouet, A., Paillard, V., BenAssayag, G., ...

Flash memories based on nanoparticles (NPs) offer an attractive alternative for performance enhancement and size downscaling of non-volatile memory cells. In these devices, Coulomb blockade and...

KFM detection of quantified charges injected into a thin SiO2 layer containing Si nps embedded by ultra low energy ion implantation using stencil lithography (2008)

Dumas, C., Ressier, L., Grisolia, J., Arbouet, A., Paillard, V., BenAssayag, G., ...

Non volatile flash memories based on nanoparticles (nps) are one of the identified routes to a further downscaling of future CMOS technology. New features such as Coulomb blockade and quantized...

Synthesis of localized 2D-layers of silicon nanoparticles embedded in a SiO2 layer by a stencil-masked ultra-low energy ion implantation process (2007)

Dumas, C, Grisolia, J, Ressier, L, Arbouet, A, Paillard, V, Ben Assayag, G, ...

We propose an original approach called “stencil-masked ion implantation process” to perform a spatially localized synthesis of a limited number of Si nanoparticles (nps) within a thin SiO2 layer....

Photoluminescence characterization of few-nanocrystals electronic devices (2006)

Arbouet, A, Carrada, M, Demangeot, F, Paillard, V, BenAssayag, G, Bonafos, C, ...

Photoluminescence (PL) spectroscopy is demonstrated as a suitable technique to characterize silicon nanocrystals (Si-NCs)-based nonvolatile memory devices. The 2D array of Si-NCs forming the floating...

Synthesis of localized 2D-layers of silicon nanoparticles embedded in a SiO2 layer by a stencil-masked ultra-low energy ion implantation process (2006)

Dumas, C, Grisolia, J, BenAssayag, G, Bonafos, C, Schamm, S, Claverie, A, ...

Non volatile flash memories based on nanoparticles are one of the possible routes to further downscaling of CMOS technology. The increase of scale integration should involve some new features for...

Photoluminescence characterization of localized 2D-layers of few-nanocrystals electronic devices (2006)

Arbouet, A, Carrada, M, Paillard, V, BenAssayag, G, Bonafos, C, Claverie, A, ...

Photoluminescence (PL) spectroscopy has been demonstrated as a suitable technique to characterize Si nanocrystal-based non-volatile memory devices (Carrada et al. APL 2005). These are formed by a...

AOPDF-shaped optical parametric amplifier output in the visible (2005)

Monmayrant, A., Arbouet, A., Girard, B., Chatel, B., Barman, A., J. Whitaker, B., ...