Imaging Electron Wave Functions Inside Open Quantum Rings (2007)
Martins, F., Hackens, B., Pala, M. G., Ouisse, T., Sellier, H., Wallart, X., ...
Combining Scanning Gate Microscopy (SGM) experiments and simulations, we demonstrate low temperature imaging of electron probability density $|\Psi|^{2}(x,y)$ in embedded mesoscopic quantum rings...
Imaging and controlling electron transport inside a quantum ring (2006)
Hackens, B., Martins, F., Ouisse, T., Sellier, H., Bollaert, S., Wallart, X., ...
Traditionally, the understanding of quantum transport, coherent and ballistic1, relies on the measurement of macroscopic properties such as the conductance. While powerful when coupled to statistical...
Submicrometer InAlAs/InGaAs Double-Gate HEMT’s on Transferred Substrate (2004)
Wichmann, N., Duszynski, I., Parenty, T., Bollaert, S., Mateos, J., Wallart, X., ...
This paper reports fabrication, DC and RF characterization of the In0.52Al0.48As/In0.53Ga0.47As doublegate HEMTs with sub-micron gate lengths. These devices present a maximum extrinsic...
Galloo, J.S., Roelens, Y., Bollaert, S., Pichonat, E., Wallart, X., Cappy, A., ...
We present processes for building passive and active ballistic devices. A 2D Monte Carlo simulator was used to optimize these devices. We present also the study of the transition between ballistic...
An overview of low noise devices and associated circuits for 100-200 GHz space applications (2003)
Dambrine, G., Parenty, Thierry, Bollaert, S., Happy, Henri, Cappy, A., Mateos, Javier, ...
This paper relates the state of the art of the HEMT low noise technologies for the space applications at millimeter wave and specially for the earth observation in the G-band (140 – 220 GHz)).The...
Long dephasing time and high temperature ballistic transport in an InGaAs open quantum dot (2002)
Hackens, B., Faniel, S., Delfosse, F., Gustin, C., Boutry, H., Huynen, I., ...
We report on measurements of the magnetoconductance of an open circular InGaAs quantum dot between 1.3K and 204K. We observe two types of magnetoconductance fluctuations: universal conductance...
HEMT's Design for Applications beyond 100GHz (2002)
Bollaert, S., Parenty, T., Wallart, X., Happy, H., Dambrine, G., Cappy, A.
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Nanotechnology : the Next Industrial Revolution ? (2002)
Cappy, A., Stievenard, D., Vuillaume, D.
The essence of nanotechnology is the ability to work at the molecular level, atom by atom, to create large structures with fundamentally new properties. Nanostructures offer a new paradigm for...
Low frequency noise conversion in fets under nonlinear operation (2001)
Danneville, F., Tamen, B., Cappy, A., Juraver, J-B, Llopis, O., Graffeuil, J.
Based upon the active line concept, the conversion mechanisms of microscopic low frequency noise (e.g. generation-recombination noise) located in the channel of a Field Effect Transistor (FET) which...
Théron, D., Cordier, Y., Wallart, X., Bollaert, S., Zaknoune, M., Boudrissa, M., ...
The paper introduces a simple and efficient approach for the modelling of low-frequency dispersive phenomena in FETs. It is based on the definition of a virtual, non-dispersive associated device...
0.12 µm GATE LENGTH In0.52Al0.48As/In0.53Ga0.47As HEMTs on transferred substrate (2001)
Bollaert, S., Wallart, X., Lepilliet, S., Cappy, A., Jalaguier, E., Pocas, S., ...
New In0.52Al0.48As/In0.53Ga0.47As transferred-substrate high electron mobility transistors (TS-HEMTs) have been successfully fabricated on 2 inch Silicon substrate with 0.12 µm T-shaped gate length....
Electroluminescence of metamorphic In x Al 1-x As / In x Ga 1-x As HEMTs ON GaAs substrate (2000)
Cavassilas, N., Aniel, F., Nojeh, A., Adde, R., Zaknoune, M., Bollaert, S., ...
We present the first impact ionization investigation by electroluminescence of InxAl1-xAs /InxGa1-xAs metamorphic High Electron Mobility transistors on GaAs. Two Indium content are investigated....
94-GHz low noise amplifier on InP in coplanar technology (1999)
Hoel, Virginie, Boret, Samuel, Grimbert, Bertrand, Aperce, Gilles, Bollaert, S., Happy, Henri, ...
High performances have been achieved at W-band with a 2-stage 0.1 um gate-length InGaAs/InAlAs/InP LM-HEMT MMIC low noise amplifier in coplanar technology. To obtain the T-gate profile, we use...
0.1um metamorphic In0.4Al0.6As/In0.4Ga0.6As HEMTs on GaAs substrate (1998)
Bollaert, S., Cordier, Y., Happy, H., Zaknoune, M., Lepilliet, S., Cappy, A.
We report on the fabrication and characterization of 0.1 urn T-gate metamorphic InAlAs/InGaAs HEMTs on GaAs substrate with InAs mole fraction of 0.4. These devices present a good Schottky diode...
A new gate process for the realization of lattice - matched HEMT on InP for high yield MMICs (1998)
Hoel, V., Bollaert, S., Wallart, X., Grimbert, B., Lepilliet, S., Cappy, A.
A new gate process for the realization of ultra short gate HEMT on InP is presented. In this technology, the top of the gate is deposited on a Si3N4 layer. This gate process leads to small...
Happy, H., Bollaert, S., Foure, H., Cappy, A.
A theoretical analysis is made of Metamorphic HEMT structures (MM-HEMT) versus LnAs molefraction. The material properties are analysed, as are the modeling of dc, ac, noise and high frequency...
Noise modelling of devices under nonlinear operation (1996)
This paper presents a general method for the calculation of the noise correlation matrix of devices under nonlinear operation. It is based on a perturbation analysis of the large-signal noiseless...
On-line noise characterization (1994)
Dambrine, G., Danneville, F., Belquin, J.M., Cappy, A.
A new method for systematic measurements of noise parameters of field effect devices has been developed. This method can be easily implemented with a conventional on-wafer station. Since no tuner is...
Dambrine, G., Cappy, A., Guillerme, Y.
The effect of the recess shape on the FET noise performance is investigated from a theoretical point of view. The noise modelling is based on quasi two dimensional calculation including non...
Etude théorique et expérimentale du transistor à effet de champ à hétérojonction (1983)
Cappy, A., Vanoverschelde, A., Zimmermann, J., Philippe, P., Versnaeyen, C., Salmer, G.
La dynamique des électrons dans un gaz bidimensionnel est étudiée par la méthode de Monte-Carlo. Les hétérojonctions envisagées sont GaAs/GaAlAs et GaInAs/InP. Ces résultats sont alors...
Theoretical contribution to the design of millimeter-waves TEO's. (1983)
Friscourt, M.R., Rolland, P.A., Cappy, A., Constant, E., Salmer, G.
Etude théorique et expérimentale du transistor à effet de champ à hétérojonction (1983)
Cappy, A., Vanoverschelde, A., Zimmermann, J., Philippe, P., Versnaeyen, C., Salmer, G.
La dynamique des électrons dans un gaz bidimensionnel est étudiée par la méthode de Monte-Carlo. Les hétérojonctions envisagées sont GaAs/GaAlAs et GaInAs/InP. Ces résultats sont alors...
Etude théorique et expérimentale du transistor à effet de champ à hétérojonction (1983)
Cappy, A., Vanoverschelde, A., Zimmermann, J., Philippe, P., Versnaeyen, C., Salmer, G.
La dynamique des électrons dans un gaz bidimensionnel est étudiée par la méthode de Monte-Carlo. Les hétérojonctions envisagées sont GaAs/GaAlAs et GaInAs/InP. Ces résultats sont alors...