Radiative Recombination Processes of Thermal Donors in Silicon (2002)
Pizzini, S., Binetti, S., Leoni, E., Acciarri, M., Castaldini, A.
There is a recent, renewed attention on the possible development of optical emitters compatible with silicon microelectronic technology and it has been recently shown that light emitting diodes could...
Defective states in semi-insulating gallium arsenide substrates (1997)
Castaldini, A., Cavallini, A., Polenta, L., Canali, C., Nava, F.
Semi-insulating gallium arsenide substrates are widely used for microwave discrete devices and integrated circuits. However, the performance of the above devices may be significantly affected by the...
Gallium Arsenide charged particle detectors: deep levels effects (1994)
Canali, C., Nava, F., Castaldini, A., Cavallini, A., Del Papa, C., Frigeri, C., ...
This paper deals with the interpretation of the charge-collection efficiency for minimum ionizing particles in terms of electron traps in semi-insulating liquid encapsuled Czochralski Gallium...
Influence of electron traps on charge-collection efficiency in GaAs radiation detectors (1994)
Nava, F, Canali, C M, Castaldini, A, Cavallini, A, D'Auria, S D, Del Papa, C, ...
DEVELOPMENTS OF IRBIC AND QIRBIC IN DEFECT STUDIES : A REVIEW (1991)
Optical injection, as well as the electronic one, is of great use for semiconductor material and component characterization, and in recent years several papers appeared dealing with the analysis of...
DEVELOPMENTS OF IRBIC AND QIRBIC IN DEFECT STUDIES : A REVIEW (1991)
Optical injection, as well as the electronic one, is of great use for semiconductor material and component characterization, and in recent years several papers appeared dealing with the analysis of...
DEVELOPMENTS OF IRBIC AND QIRBIC IN DEFECT STUDIES : A REVIEW (1991)
Optical injection, as well as the electronic one, is of great use for semiconductor material and component characterization, and in recent years several papers appeared dealing with the analysis of...
Castaldini, A., Cavallini, A., Poggi, A., Susi, E.
Microscopic inhomogeneities in the electrical properties of semiconductors are of great importance to device performances, particularly in advanced device technology. Then in the last few years great...
Castaldini, A., Cavallini, A., Poggi, A., Susi, E.
Microscopic inhomogeneities in the electrical properties of semiconductors are of great importance to device performances, particularly in advanced device technology. Then in the last few years great...
Castaldini, A., Cavallini, A., Poggi, A., Susi, E.
Microscopic inhomogeneities in the electrical properties of semiconductors are of great importance to device performances, particularly in advanced device technology. Then in the last few years great...
LATTICE DEFECT EFFECTS IN INDUCED CURRENT SCANNING MICROSCOPY (1983)
Castaldini, A., Cavallini, A., Gondi, P.
Characteristics of EBIC and IRBIC images as well as electrical effects are considered on their dependence on both point defects and dislocations introduced by deformation in elemental semiconductors.
LATTICE DEFECT EFFECTS IN INDUCED CURRENT SCANNING MICROSCOPY (1983)
Castaldini, A., Cavallini, A., Gondi, P.
Characteristics of EBIC and IRBIC images as well as electrical effects are considered on their dependence on both point defects and dislocations introduced by deformation in elemental semiconductors.
LATTICE DEFECT EFFECTS IN INDUCED CURRENT SCANNING MICROSCOPY (1983)
Castaldini, A., Cavallini, A., Gondi, P.
Characteristics of EBIC and IRBIC images as well as electrical effects are considered on their dependence on both point defects and dislocations introduced by deformation in elemental semiconductors.
HALL EFFECT RESULTS ON Ge DEFORMED AT RELATIVELY LOW TEMPERATURES (1979)
Gondi, P., Cavallini, A., Castaldini, A.
Electrical effects of dislocations introduced at 350°C in n-and p-type Ge are considered. Results are consistent with a neutral dislocation level at 0.020 - 0.025 eV from the valence band. By...
HALL EFFECT RESULTS ON Ge DEFORMED AT RELATIVELY LOW TEMPERATURES (1979)
Gondi, P., Cavallini, A., Castaldini, A.
Electrical effects of dislocations introduced at 350°C in n-and p-type Ge are considered. Results are consistent with a neutral dislocation level at 0.020 - 0.025 eV from the valence band. By...
HALL EFFECT RESULTS ON Ge DEFORMED AT RELATIVELY LOW TEMPERATURES (1979)
Gondi, P., Cavallini, A., Castaldini, A.
Electrical effects of dislocations introduced at 350°C in n-and p-type Ge are considered. Results are consistent with a neutral dislocation level at 0.020 - 0.025 eV from the valence band. By...