Defect Distribution along Single GaN Nanowhiskers (2006)
Cavallini, A., Polenta, L., Rossi, M., Richter, T., Marso, M., Meijers, R., ...
Development of radiation tolerant semiconductor detectors for the Super-LHC (2005)
Moll, M., Adey, J., Al-Ajili, A., Alfieri, G., Allport, P. P., Artuso, M., ...
The envisaged upgrade of the Large Hadron Collider (LHC) at CERN towards the Super-LHC (SLHC) with a 10 times increased luminosity of 10(35) cm(-2) s(-1) Will present severe challenges for the...
Radiation-hard semiconductor detectors for SuperLHC (2005)
Bruzzi, M., Adey, J., Al-Ajili, A., Alexandrov, P., Alfieri, G., Allport, P. P., ...
An option of increasing the luminosity of the Large Hadron Collider (LHC) at CERN to 1035 cm-2 s-1 has been envisaged to extend the physics reach of the machine. An efficient tracking down to a few...
Recent advancements in the development of radiation hard semiconductor detectors for S-LHC (2005)
Fretwurst, E., Adey, J., Al-Ajili, A., Alfieri, G., Allport, P. P., Artuso, M., ...
The proposed luminosity upgrade of the Large Hadron Collider (S-LHC) at CERN will demand the innermost layers of the vertex detectors to sustain fluences of about 10(16) hadrons/cm(2). Due to the...
Radiation-hard semiconductor detectors for SuperLHC (2005)
Bruzzi, M., Adey, J., Al-Ajili, A., Alexandrov, P., Alfieri, G., Allport, P. P., ...
An option of increasing the luminosity of the Large Hadron Collider (LHC) at CERN to 1035 cm-2 s-1 has been envisaged to extend the physics reach of the machine. An efficient tracking down to a few...
Recent advancements in the development of radiation hard semiconductor detectors for S-LHC (2005)
Fretwurst, E., Adey, J., Al-Ajili, A., Alfieri, G., Allport, P. P., Artuso, M., ...
The proposed luminosity upgrade of the Large Hadron Collider (S-LHC) at CERN will demand the innermost layers of the vertex detectors to sustain fluences of about 10(16) hadrons/cm(2). Due to the...
Development of radiation tolerant semiconductor detectors for the Super-LHC (2005)
Moll, M., Adey, J., Al-Ajili, A., Alfieri, G., Allport, P. P., Artuso, M., ...
The envisaged upgrade of the Large Hadron Collider (LHC) at CERN towards the Super-LHC (SLHC) with a 10 times increased luminosity of 10(35) cm(-2) s(-1) Will present severe challenges for the...
Capotondi, F., Biasiol, G., Vobornik, I., Sorba, L., Giazotto, F., Cavallini, A., ...
We report on the achievement of a two-dimensional electron gas in completely undoped In[0.75]Al[0.25]As/In[0.75]Ga[0.25]As metamorphic quantum wells. Using these structures we were able to reduce the...
Defective states in semi-insulating gallium arsenide substrates (1997)
Castaldini, A., Cavallini, A., Polenta, L., Canali, C., Nava, F.
Semi-insulating gallium arsenide substrates are widely used for microwave discrete devices and integrated circuits. However, the performance of the above devices may be significantly affected by the...
Energy Levels Associated with Extended Defects in Plastically Deformed n-Type Silicon (1997)
Cavalcoli, D., Cavallini, A., Gombia, E.
Deep Level Transient Spectroscopy (DLTS) investigations of plastically deformed, n-type silicon have been performed. DLTS spectra revealed four lines usually found in deformed silicon but they were...
Thermal Behaviour of Deep Levels at Dislocations in n-Type Silicon (1997)
Cavalcoli, D., Cavallini, A., Gombia, E.
The thermal behaviour of deformation-induced traps in plastically deformed n-type silicon has been investigated via Deep Level Transient Spectroscopy. Among the four traps usually detected in...
Energy Levels Associated with Extended Defects in Plastically Deformed n-Type Silicon (1997)
Cavalcoli, D., Cavallini, A., Gombia, E.
Deep Level Transient Spectroscopy (DLTS) investigations of plastically deformed, n-type silicon have been performed. DLTS spectra revealed four lines usually found in deformed silicon but they were...
Thermal Behaviour of Deep Levels at Dislocations in n-Type Silicon (1997)
Cavalcoli, D., Cavallini, A., Gombia, E.
The thermal behaviour of deformation-induced traps in plastically deformed n-type silicon has been investigated via Deep Level Transient Spectroscopy. Among the four traps usually detected in...
Energy Levels Associated with Extended Defects in Plastically Deformed n-Type Silicon (1997)
Cavalcoli, D., Cavallini, A., Gombia, E.
Deep Level Transient Spectroscopy (DLTS) investigations of plastically deformed, n-type silicon have been performed. DLTS spectra revealed four lines usually found in deformed silicon but they were...
Thermal Behaviour of Deep Levels at Dislocations in n-Type Silicon (1997)
Cavalcoli, D., Cavallini, A., Gombia, E.
The thermal behaviour of deformation-induced traps in plastically deformed n-type silicon has been investigated via Deep Level Transient Spectroscopy. Among the four traps usually detected in...
Fambrini, M., Sebastiani, L., Rossi, V.D., Cavallini, A., Pugliesi, C.
Polyacrylamide gel electrophoresis of water-soluble proteins from sunflower (Helianthus annuus L.) cotyledons, followed by specific staining for superoxide dismutase activity, discriminated,...
SI LEC GaAs nuclear detectors: characterization, performance and applications (1996)
Nava, F., Vanni, P., Canali, C., Cavallini, A., Chiossi, C., Bertuccio, G., ...
We report on characterization, performance and applications of nuclear detectors fabricated on Semi-Insulating (SI) Liquid Encapsulated Czokralski (LEC) grown GaAs. We have developed a non alloyed...
Variation of Repetitive DNA Sequences in Progenies of Regenerated Plants of Pisum sativum (1996)
Cavallini, A., Natali, L., Polizzl, E., Giordani, T.
The frequency variation of highly repeated (HR) DNA sequences was studied in plants regenerated through in vitro culture of macerated vegetative apices of Pisum sativum and their progenies. Feulgen...
Gallium Arsenide charged particle detectors: deep levels effects (1994)
Canali, C., Nava, F., Castaldini, A., Cavallini, A., Del Papa, C., Frigeri, C., ...
This paper deals with the interpretation of the charge-collection efficiency for minimum ionizing particles in terms of electron traps in semi-insulating liquid encapsuled Czochralski Gallium...
Influence of electron traps on charge-collection efficiency in GaAs radiation detectors (1994)
Nava, F, Canali, C M, Castaldini, A, Cavallini, A, D'Auria, S D, Del Papa, C, ...
Qualification of Personal Dosimetry Services in Italy: Procedures and Results (1994)
Cavallini, A., Klamert, V., Busuoli, G.
About 80 services, processing over 2,000,000 dosemeters yearly, operate in Italy today. As no official guidelines on the performance of personal dosimetry services have been established in Italy, A...
Local Recording Practice in Dose Record Keeping in Italy (1994)
Litido, M.I., Cavallini, A., Chili, L.
At present a National Dose Data Bank maintained by ENEA (National Agency for New Technologies, Energy and Environment) collects information on 50,000 Italian workers exposed to external ionising...
DEVELOPMENTS OF IRBIC AND QIRBIC IN DEFECT STUDIES : A REVIEW (1991)
Optical injection, as well as the electronic one, is of great use for semiconductor material and component characterization, and in recent years several papers appeared dealing with the analysis of...
DEVELOPMENTS OF IRBIC AND QIRBIC IN DEFECT STUDIES : A REVIEW (1991)
Optical injection, as well as the electronic one, is of great use for semiconductor material and component characterization, and in recent years several papers appeared dealing with the analysis of...
DEVELOPMENTS OF IRBIC AND QIRBIC IN DEFECT STUDIES : A REVIEW (1991)
Optical injection, as well as the electronic one, is of great use for semiconductor material and component characterization, and in recent years several papers appeared dealing with the analysis of...
Italian Experience of Statistical Analysis of Occupational Exposures (1991)
Litido, M., Cavallini, A., Grannò, L.
At present, ENEA (National Committee of Nuclear and Alternative Energy) is compiling a National Data Bank to collect information on Italian workers exposed to ionising radiation; such data, relevant...
Castaldini, A., Cavallini, A., Poggi, A., Susi, E.
Microscopic inhomogeneities in the electrical properties of semiconductors are of great importance to device performances, particularly in advanced device technology. Then in the last few years great...
Castaldini, A., Cavallini, A., Poggi, A., Susi, E.
Microscopic inhomogeneities in the electrical properties of semiconductors are of great importance to device performances, particularly in advanced device technology. Then in the last few years great...
Castaldini, A., Cavallini, A., Poggi, A., Susi, E.
Microscopic inhomogeneities in the electrical properties of semiconductors are of great importance to device performances, particularly in advanced device technology. Then in the last few years great...
Busuoli, G., Cavallini, A., Klamert, V., Monteventi, F.
In order to assess the feasibility of a new methodology to obtain the response of dosemeters directly in terms of the operational dosimetric quantities H'(10) and H'(0.07), tests have been performed...
INTERNAL FRICTION PEAKS CONNECTED WITH GRAIN BOUNDARY SLIDING IN Al (1983)
Bonetti, E., Cavallini, A., Evangelista, E., Gondi, P.
Conditions of dynamic equilibrium between grain boundary sink and emission of lattice dislocations without g.b. sliding, unilateral sink or emission of climbing lattice dislocations with extrinsic or...
LATTICE DEFECT EFFECTS IN INDUCED CURRENT SCANNING MICROSCOPY (1983)
Castaldini, A., Cavallini, A., Gondi, P.
Characteristics of EBIC and IRBIC images as well as electrical effects are considered on their dependence on both point defects and dislocations introduced by deformation in elemental semiconductors.
INTERNAL FRICTION PEAKS CONNECTED WITH GRAIN BOUNDARY SLIDING IN Al (1983)
Bonetti, E., Cavallini, A., Evangelista, E., Gondi, P.
Conditions of dynamic equilibrium between grain boundary sink and emission of lattice dislocations without g.b. sliding, unilateral sink or emission of climbing lattice dislocations with extrinsic or...
LATTICE DEFECT EFFECTS IN INDUCED CURRENT SCANNING MICROSCOPY (1983)
Castaldini, A., Cavallini, A., Gondi, P.
Characteristics of EBIC and IRBIC images as well as electrical effects are considered on their dependence on both point defects and dislocations introduced by deformation in elemental semiconductors.
INTERNAL FRICTION PEAKS CONNECTED WITH GRAIN BOUNDARY SLIDING IN Al (1983)
Bonetti, E., Cavallini, A., Evangelista, E., Gondi, P.
Conditions of dynamic equilibrium between grain boundary sink and emission of lattice dislocations without g.b. sliding, unilateral sink or emission of climbing lattice dislocations with extrinsic or...
LATTICE DEFECT EFFECTS IN INDUCED CURRENT SCANNING MICROSCOPY (1983)
Castaldini, A., Cavallini, A., Gondi, P.
Characteristics of EBIC and IRBIC images as well as electrical effects are considered on their dependence on both point defects and dislocations introduced by deformation in elemental semiconductors.
HALL EFFECT RESULTS ON Ge DEFORMED AT RELATIVELY LOW TEMPERATURES (1979)
Gondi, P., Cavallini, A., Castaldini, A.
Electrical effects of dislocations introduced at 350°C in n-and p-type Ge are considered. Results are consistent with a neutral dislocation level at 0.020 - 0.025 eV from the valence band. By...
HALL EFFECT RESULTS ON Ge DEFORMED AT RELATIVELY LOW TEMPERATURES (1979)
Gondi, P., Cavallini, A., Castaldini, A.
Electrical effects of dislocations introduced at 350°C in n-and p-type Ge are considered. Results are consistent with a neutral dislocation level at 0.020 - 0.025 eV from the valence band. By...
HALL EFFECT RESULTS ON Ge DEFORMED AT RELATIVELY LOW TEMPERATURES (1979)
Gondi, P., Cavallini, A., Castaldini, A.
Electrical effects of dislocations introduced at 350°C in n-and p-type Ge are considered. Results are consistent with a neutral dislocation level at 0.020 - 0.025 eV from the valence band. By...