A. G. Banshchikov

Publication List Details

Period

2002 - 2002

Number

4

Co-Authors

Second Harmonic Generation Probing of MnAs/Si(111) Heterostructures (2002)

Banshchikov, A. G., Kimel, A. V., Pavlor, V. V., Pisarev, R. V.

Ferromgnetic semiconductor heterostructures MnAs/Si(111) have been studied by using the optical second harmonic generation and the linear magneto-optical Kerr effect. Magnetic and crystallographic...

Growth and Structure of Mn=Ca1- chiF2 Epitaxial Films on Si(111) (2002)

Yakovlev, N. L., Banshchikov, A. G., Kyutt, R. N., Sokolov, N. S., Hirsch, L.

Molecular beam epitaxy was used to grow films of MnF2 and CaF2 solid solutions on Si(111) substrates. The composition of the solutions was measured using oscillations of reflection high energy...

Epitaxial Growth and Characterization of MnAs/Si(111) Nanoscale Magnetoelectronic Heterostructures (2002)

Banshchikov, A. G., Pisarev, R. V., Rzhevsky, A. A., Sokolov, N. S., Nazmul, Ahsan M.

Molecular beam epitaxy was used to grow thin (6-12 nm) ferromagnetic MnAs films on a Si(111) substrate. The characterization of the film structural and magnetic properties was carried out using...

Epitaxial Stabilization of a-PbO2 Structure in MnF2 Layers on Si and GaP (2002)

Banshchikov, A. G., Anisimov, O. V., Kartenko, N. F., Moisseeva, M. M., Sokolov, N. S.

Epitaxial MnF2 films as thick as 350 nm have been grown on Si and GaP substrates. X-ray diffractometry revealed that the MnF2 films have the alpha-PbO2 type orthorhombic structure with the lattice...