Gd disilicide nanowires attached to Si(111) steps (2002)
McChesney, J. L., Kirakosian, A., Bennewitza, R., Crain, J. N., Lin, J. -L., Himpsel, F. J.
Self-assembled electronic devices, such as quantum dots or switchable molecules, need self-assembled nanowires as connections. We explore the growth of conducting Gd disilicide nanowires at step...
Atomic Scale Memory at a Silicon Surface (2002)
Bennewitz, R., Crain, J. N., Kirakosian, A., Lin, J. -L., McChesney, J. L., Petrovykh, D. Y., ...
The limits of pushing storage density to the atomic scale are explored with a memory that stores a bit by the presence or absence of one silicon atom. These atoms are positioned at lattice sites...
Lin, J.-L., Petrovykh, D.Y., Kirakosian, A., Rauscher, H., Himpsel, F.J., Dowben, Peter A.
Linear arrays of 3 nm wide Fe stripes with 15 nm spacing are fabricated by self-assembly. They are formed by photolysis of ferrocene that is selectively adsorbed between CaF2 stripes. An ultraviolet...
Functionalization of silicon step arrays II: Molecular orientation of alkanes and DNA (2001)
Crain, J.N., Kirakosian, A., Lin, J.-L., Yuedong Gu, Shah, R.R., Abbott, Nicholas L., ...
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Selective adsorption of metallocenes on clean and chemically modified Si(111) surfaces (1999)
Lin, J.-L., Rauscher, H., Kirakosian, A., Himpsel, F.J., Dowben, Peter A.
Metallocene adsorption on clean Si(111) and CaF2/CaF1/Si(111) substrates has been investigated with scanning tunneling microscopy. The surface chemical composition is found to strongly change the...