X-ray waveguides and thin macromolecular films (2007)
Salditt, T., Pfeiffer, F., Perzl, H., Vix, A., Mennicke, U., Jarre, A., ...
We report waveguide-enhanced X-ray experiments on thin macromolecular films, such as spin-coated polymer films, self-assembled polyelectrolyte layers, and lipid membranes, prepared on solid surfaces....
Zeimer, U., Grenzer, J., Baumbach, T., Lübbert, D., Mazuelas, A., Erbert, G.
Broad-area lasers were investigated by high resolution x-ray diffraction (HRXRD) and topography, before and during laser operation. Rocking curves were taken at different positions of the 150 µm...
Observation of dislocation generation in highly strained quantum well lasers during operation (2001)
Mazuelas, A., Dotor, M.L., Golmayo, D., Zeimer, U., Baumbach, T., Luebbert, D., ...
For the first time, we have obtained the real-time observation, by x-ray topography, of the laser degradation due to the formation of misfit dislocations. We drive the laser diode under a...
Elastic Stress Relaxation in GaInAsP Quantum Wires on InP (1999)
Baumbach, T., Lübbert, D., Mazuelas, A., Paris, G., Jenichen, B., Kojima, T., ...
High resolution x-ray diffractometry and photoluminescence measurements (PL) have been used to compare the effects of elastic stress relaxaton of free standing and overgrown Ga0.22In0.78As0.80P0.20...
Zeimer, U., Baumbach, T., Grenzer, J., Lübbert, D., Pietsch, U., Mazuelas, A., ...
The strain distribution in broad-area high-power semiconductor laser diodes is investigated both before and during operation and degradation by high-resolution x-ray diffraction using synchrotron...
A Raman spectroscopic study of the Si, Be, and C incorporation in InxGa1-xAs relaxed layers (1995)
Alvarez, A.-L., Calle, F., Sacedon, A., Calleja, E., Munoz, E., Wagner, J., ...
The incorporation of high concentrations (>1019 cm-3) of Si, Be, and C in InxGa1-xAs relaxed layers has been studied as a function of In content (x<or=0.16) by Raman spectroscopy of local...
High carbon doping of Ga1-xInxAs /x about 0.01/ grown by molecular beam epitaxy (1995)
Mazuelas, A., Maier, M., Wagner, J., Fischer, A., Trampert, A., Ploog, K.
We have grown layers of Ga1-x Inx As: C (x ~ 0.01) on (100) GaAs by molecular beam epitaxy. As C source a graphite filament was used. Structures coherent with the substrate were obtained by adjusting...
Determination of the bonding of carbon acceptors in InxGa1-xAs for x smallr than 0.1 (1995)
Pritchard, R.E., Newman, R.C., Wagner, J., Maier, M., Mazuelas, A., Lane, P.A., ...
The local environment of CdeepAs acceptors in IndeepxGadeep1-deepxAs has been determined from the localized vibrational modes (LVMs) of both isolated CdeepAs impurities and H-CdeepAs pairs using...