invited Parallel Semiconductor Device Simulation: from Power to ‘Atomistic ’ Devices (2008)
A. Asenov, A. R. Brown, S. Roy
This paper discusses various aspects of the parallel simulation of semiconductor devices on mesh connected MIMD platforms with distributed memory and a message passing programming paradigm. We...
The Arcminute Microkelvin Imager (2008)
Barker, R. W., Biddulph, P., Bly, D., Boysen, R. C., Brown, A. R., ...
The Arcminute Microkelvin Imager is a pair of interferometer arrays operating with six frequency channels spanning 13.9-18.2 GHz, with very high sensitivity to angular scales 30''-10'. The telescope...
DEVELOPMENT OF A PARALLEL 3D FINITE ELEMENT POWER SEMICONDUCTOR DEVICE SIMULATOR (2008)
A. R. Brown, A. Asenov, S. Roy, J. R. Barker
Due to the complicated behaviour of power semiconductor devices, numerical modelling has become an important and widely accepted approach for device analysis and optimisation 1,2. The design of...
Abstract Sub-25 nm UTB SOI SRAM cell under the influence of discrete random dopants (2006)
K. Samsudin, B. Cheng, A. R. Brown, S. Roy, A. Asenov
will eliminate much of the available noise margin in SRAM based on conventional MOSFETs. Device mismatch due to intrinsic parameter fluctuation causes each memory cell of the millions in a typical...
UTB SOI SRAM cell stability under the influence of intrinsic parameter fluctuation (2005)
Samsudin, K., Cheng, B., Brown, A. R., Roy, S., Asenov, A.
Intrinsic parameter fluctuations steadily increases with CMOS technology scaling. Around the 90nm technology node, such fluctuations will eliminate much of the available noise margin in SRAM based on...
Impact of random dopant induced fluctuations on sub-15nm UTB SOI 6T SRAM cells (2005)
Samsudin, K., Cheng, B., Brown, A. R., Roy, S., Asenov, A.
The CMOS scaling increases the impact of intrinsic parameter fluctuation on the yield and functionality of SRAM. A statistical circuit simulation framework which can fully capture intrinsic parameter...
A framework for comparison of process in algorithmic music systems (2005)
Wooller, R., Brown, A. R., Miranda, E. R., Berry, R., Diederich, J.
No abstract
RTS amplitudes in decanano n-MOSFETs with conventional and high-k gate stacks (2004)
Lee, A., Brown, A. R., Asenov, A., Roy, S.
Low frequency (LF) noise in MOSFETs has been a topic of interest to both academia and industry in recent years. It is becoming a major concern for analogue circuit performance, DRAM operation, and...
Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs (2003)
Asenov, A., Brown, A. R., Davies, J. H., Kaya, S., Slavcheva, G.
Intrinsic parameter fluctuations introduced by discreteness of charge and matter will play an increasingly important role when semiconductor devices are scaled to decananometer and nanometer...
Asenov, A., Kaya, S., Brown, A. R.
In this paper, we use statistical three-dimensional (3-D) simulations to study the impact of the gate line edge roughness (LER) on the intrinsic parameters fluctuations in deep decananometer (sub 50...
RTS amplitudes in decananometer MOSFETs: 3-D simulation study (2003)
Asenov, A., Balasubramaniam, R., Brown, A. R., Davies, J. H.
In this paper we study the amplitudes of random telegraph signals (RTS) associated with the trapping of a single electron in defect states at the Si/SiO/sub 2/ interface of sub-100-nm (decananometer)...
Merlin, Tracy L., Hiller, Janet Esther, Maddern, Guy John, Jamieson, Glyn Garfield, Brown, A. R., Kolbe, A.
Copyright © 2003 British Journal of Surgery Society Ltd. Published by John Wiley & Sons, Ltd. The definitive version may be found at www.wiley.com
Merlin, Tracy L., Hiller, Janet Esther, Maddern, Guy John, Jamieson, Glyn Garfield, Brown, A. R., Kolbe, A.
Copyright © 2003 British Journal of Surgery Society Ltd. Published by John Wiley & Sons, Ltd. The definitive version may be found at www.wiley.com
Brown, A. R., Asenov, A., Watling, J. R.
We study, using numerical simulation, the intrinsic parameter fluctuations in sub 10 nm gate length double gate MOSFETs introduced by discreteness of charge and atomicity of matter. The employed...
Large-eddy simulation of the diurnal cycle of shallow cumulus convection overland (2002)
Brown,A. R., Cederwall,R. T., Chlond,Andreas, Duynkerke,P. G., Golaz,J. C., Khairoutdinov,M., ...
Large-eddy simulations of the development of shallow cumulus convection over land are presented. Many characteristics of the cumulus layer previously found in simulations of quasi-steady convection...
Large-eddy simulation of the diurnal cycle of shallow cumulus convection overland (2002)
Brown, A. R., Cederwall, R. T., Chlond, Andreas, Duynkerke, P. G., Golaz, J. C., Khairoutdinov, M., ...
Large-eddy simulations of the development of shallow cumulus convection over land are presented. Many characteristics of the cumulus layer previously found in simulations of quasi-steady convection...
Watling, J.R., Brown, A.R., Asenov, A., Svizhenko, A., Anantram, M.P.
Quantum mechanical confinement effects, gate, hand-to-hand and source-to-drain tunnelling will dramatically affect the characteristics of future generation nanometre scaled devices. It has been...
Asenov, A., Slavcheva, G., Brown, A. R., Saini, S.
In this paper, we present a detailed simulation study of the influence of quantum mechanical effects in the inversion layer on random dopant induced threshold voltage fluctuations and lowering in...
Asenov, A., Balasubramaniam, R., Brown, A.R., Davies, J.H., Saini, S.
In this paper we use 3D simulations to study the amplitudes of random telegraph signals (RTS) associated with the trapping of a single carrier in interface states in the channel of sub 100 nm...
Hierarchical approach to “atomistic” 3-D MOSFET simulation (1999)
Asenov, A., Brown, A. R., Davies, J. H., Saini, S.
We present a hierarchical approach to the “atomistic” simulation of aggressively scaled sub-0.1-μm MOSFETs. These devices are so small that their characteristics depend on the precise location...
Asenov, A., Slavcheva, G., Brown, A.R., Davies, J.H., Saini, S.
A detailed study of the influence of quantum effects in the inversion layer on the random dopant induced threshold voltage fluctuations and lowering in sub 0.1 micron MOSFETs has been performed. This...
Parallel semiconductor device simulation: from power to 'atomistic' devices (1998)
Asenov, A., Brown, A.R., Roy, S.
This paper discusses various aspects of the parallel simulation of semiconductor devices on mesh connected MIMD platforms with distributed memory and a message passing programming paradigm. We...
Topologically Rectangular Grids in the Parallel Simulation of Semiconductor Devices (1998)
A. Asenov, A. R. Brown, S. Roy, J. R. Barker
Topologically rectangular grids offer simplicity and efficiency in the design of parallel semiconductor device simulators tailored for mesh connected MIMD platforms. This paper presents several...
3D Parallel Finite Element Simulation of In-Cell Breakdown in Lateral-Channel IGBTs (1998)
A. R. Brown, A. Asenov, J. R. Barker
In this paper we describe the use of 3D parallel finite element solution of the Poisson equation to calculate the in-cell breakdown voltage in lateral channel IGBTs. The solver is based on...
Field-effect transistor studies of precursor-pentacene thin films (1997)
Jarrett, C. P., Brown, A. R., Friend, R. H., Harrison, M. G., De Leeuw, D. M., Herwig, P., ...
Modelling turbulent sheared convection. (1995)
Thesis (Ph. D.)--University of Surrey, 1995.
Andren, A., Brown, A.R., Graf, J., Mason, P.J., Nieuwstadt, F.T.M., ...
A neutrally stratified Ekman layer limited in depth by a stress-free rigid lid has been simulated using four different large-eddy simulation computer codes. This is the second large-eddy simulation...
Electroluminscence in poly(p-phenylenevinylene) and derivatives. (1992)
Brown, A.R, Cambridge Univ. (GB).
Thesis (Ph.D.)
The diffusion and precipation of oxygen in annealed Czochralski silicon (1988)
Messoloras, S, Newman, R C, Stewart, R J, Brown, A R, Claybourn, M, Murray, R, ...
Proc of the ALVEY Conference, Swansea, 1988, 'UK IT 88' IEE publ 315-319 (1988)
Selling Television Time: An Optimisation Problem (1969)
This paper presents the continuing effort by the author and his colleagues to solve a problem inherent in the selling activities of their Company. The problem is optimisation of spare capacity: in...
Nelson, R. R. S., McGregor, K. F., Brown, A. R., Amyes, S. G. B.
In February 1996, a Hospital Infection Control Practices Advisory Committee-style screening program was commenced to isolate and subsequently characterize glycopeptide-resistant enterococci (GRE)...
Brown, A. R., Townsley, A. C., Amyes, S. G. B.
The Tn1546-related elements of 48 Van glycopetide-resistant enterococci were compared. Ten distinct Tn1546 types were identified with variation primarily due to IS1542 and IS1216V-like insertions....
Christy, R J, Brown, A R, Gourlie, B B, Huang, R C
Nucleotide sequences of the long terminal repeats (LTRs) of four murine intracisternal A-particle (IAP) genes IAP62, 19, 81 and 14 were determined. Each IAP LTR contains three sequence domains,...
Consent to treatment and the mentally incapacitated adult.
Turner, N J, Brown, A R, Baxter, K F
Doctors are sometimes faced with adult patients who lack the mental capacity to consent to treatment. In a questionnaire, 120 doctors in a district general hospital were asked what action they would...
Intrinsic parameter fluctuations in decananometer MOSFETs introduced by gate line edge roughness
Asenov, A., Kaya, S., Brown, A. R.
In this paper, we use statistical three-dimensional (3-D) simulations to study the impact of the gate line edge roughness (LER) on the intrinsic parameters fluctuations in deep decananometer (sub 50...
Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs
Asenov, A., Brown, A. R., Davies, J. H., Kaya, S., Slavcheva, G.
Intrinsic parameter fluctuations introduced by discreteness of charge and matter will play an increasingly important role when semiconductor devices are scaled to decananometer and nanometer...
RTS amplitudes in decananometer MOSFETs: 3-D simulation study
Asenov, A., Balasubramaniam, R., Brown, A. R., Davies, J. H.
In this paper we study the amplitudes of random telegraph signals (RTS) associated with the trapping of a single electron in defect states at the Si/SiO/sub 2/ interface of sub-100-nm (decananometer)...
Brown, A. R., Asenov, A., Watling, J. R.
We study, using numerical simulation, the intrinsic parameter fluctuations in sub 10 nm gate length double gate MOSFETs introduced by discreteness of charge and atomicity of matter. The employed...
Asenov, A., Slavcheva, G., Brown, A. R., Saini, S.
In this paper, we present a detailed simulation study of the influence of quantum mechanical effects in the inversion layer on random dopant induced threshold voltage fluctuations and lowering in...
Hierarchical approach to “atomistic” 3-D MOSFET simulation
Asenov, A., Brown, A. R., Davies, J. H., Saini, S.
We present a hierarchical approach to the “atomistic” simulation of aggressively scaled sub-0.1-μm MOSFETs. These devices are so small that their characteristics depend on the precise location...
UTB SOI SRAM cell stability under the influence of intrinsic parameter fluctuation
Samsudin, K., Cheng, B., Brown, A. R., Roy, S., Asenov, A.
Intrinsic parameter fluctuations steadily increases with CMOS technology scaling. Around the 90nm technology node, such fluctuations will eliminate much of the available noise margin in SRAM based on...
Impact of random dopant induced fluctuations on sub-15nm UTB SOI 6T SRAM cells
Samsudin, K., Cheng, B., Brown, A. R., Roy, S., Asenov, A.
The CMOS scaling increases the impact of intrinsic parameter fluctuation on the yield and functionality of SRAM. A statistical circuit simulation framework which can fully capture intrinsic parameter...
RTS amplitudes in decanano n-MOSFETs with conventional and high-k gate stacks
Lee, A., Brown, A. R., Asenov, A., Roy, S.
Low frequency (LF) noise in MOSFETs has been a topic of interest to both academia and industry in recent years. It is becoming a major concern for analogue circuit performance, DRAM operation, and...
Watling, J.R., Brown, A.R., Asenov, A., Svizhenko, A., Anantram, M.P.
Quantum mechanical confinement effects, gate, hand-to-hand and source-to-drain tunnelling will dramatically affect the characteristics of future generation nanometre scaled devices. It has been...
Asenov, A., Balasubramaniam, R., Brown, A.R., Davies, J.H., Saini, S.
In this paper we use 3D simulations to study the amplitudes of random telegraph signals (RTS) associated with the trapping of a single carrier in interface states in the channel of sub 100 nm...
Asenov, A., Slavcheva, G., Brown, A.R., Davies, J.H., Saini, S.
A detailed study of the influence of quantum effects in the inversion layer on the random dopant induced threshold voltage fluctuations and lowering in sub 0.1 micron MOSFETs has been performed. This...
Parallel semiconductor device simulation: from power to 'atomistic' devices
Asenov, A., Brown, A.R., Roy, S.
This paper discusses various aspects of the parallel simulation of semiconductor devices on mesh connected MIMD platforms with distributed memory and a message passing programming paradigm. We...
Nelson, R. R. S., McGregor, K. F., Brown, A. R., Amyes, S. G. B.
In February 1996, a Hospital Infection Control Practices Advisory Committee-style screening program was commenced to isolate and subsequently characterize glycopeptide-resistant enterococci (GRE)...
Brown, A. R., Townsley, A. C., Amyes, S. G. B.
The Tn1546-related elements of 48 Van glycopetide-resistant enterococci were compared. Ten distinct Tn1546 types were identified with variation primarily due to IS1542 and IS1216V-like insertions....
Christy, R J, Brown, A R, Gourlie, B B, Huang, R C
Nucleotide sequences of the long terminal repeats (LTRs) of four murine intracisternal A-particle (IAP) genes IAP62, 19, 81 and 14 were determined. Each IAP LTR contains three sequence domains,...
Consent to treatment and the mentally incapacitated adult.
Turner, N J, Brown, A R, Baxter, K F
Doctors are sometimes faced with adult patients who lack the mental capacity to consent to treatment. In a questionnaire, 120 doctors in a district general hospital were asked what action they would...
Intrinsic parameter fluctuations in decananometer MOSFETs introduced by gate line edge roughness
Asenov, A., Kaya, S., Brown, A. R.
In this paper, we use statistical three-dimensional (3-D) simulations to study the impact of the gate line edge roughness (LER) on the intrinsic parameters fluctuations in deep decananometer (sub 50...
Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs
Asenov, A., Brown, A. R., Davies, J. H., Kaya, S., Slavcheva, G.
Intrinsic parameter fluctuations introduced by discreteness of charge and matter will play an increasingly important role when semiconductor devices are scaled to decananometer and nanometer...
RTS amplitudes in decananometer MOSFETs: 3-D simulation study
Asenov, A., Balasubramaniam, R., Brown, A. R., Davies, J. H.
In this paper we study the amplitudes of random telegraph signals (RTS) associated with the trapping of a single electron in defect states at the Si/SiO/sub 2/ interface of sub-100-nm (decananometer)...
Brown, A. R., Asenov, A., Watling, J. R.
We study, using numerical simulation, the intrinsic parameter fluctuations in sub 10 nm gate length double gate MOSFETs introduced by discreteness of charge and atomicity of matter. The employed...
Asenov, A., Slavcheva, G., Brown, A. R., Saini, S.
In this paper, we present a detailed simulation study of the influence of quantum mechanical effects in the inversion layer on random dopant induced threshold voltage fluctuations and lowering in...
Hierarchical approach to “atomistic” 3-D MOSFET simulation
Asenov, A., Brown, A. R., Davies, J. H., Saini, S.
We present a hierarchical approach to the “atomistic” simulation of aggressively scaled sub-0.1-μm MOSFETs. These devices are so small that their characteristics depend on the precise location...
UTB SOI SRAM cell stability under the influence of intrinsic parameter fluctuation
Samsudin, K., Cheng, B., Brown, A. R., Roy, S., Asenov, A.
Intrinsic parameter fluctuations steadily increases with CMOS technology scaling. Around the 90nm technology node, such fluctuations will eliminate much of the available noise margin in SRAM based on...
Impact of random dopant induced fluctuations on sub-15nm UTB SOI 6T SRAM cells
Samsudin, K., Cheng, B., Brown, A. R., Roy, S., Asenov, A.
The CMOS scaling increases the impact of intrinsic parameter fluctuation on the yield and functionality of SRAM. A statistical circuit simulation framework which can fully capture intrinsic parameter...
RTS amplitudes in decanano n-MOSFETs with conventional and high-k gate stacks
Lee, A., Brown, A. R., Asenov, A., Roy, S.
Low frequency (LF) noise in MOSFETs has been a topic of interest to both academia and industry in recent years. It is becoming a major concern for analogue circuit performance, DRAM operation, and...
Watling, J.R., Brown, A.R., Asenov, A., Svizhenko, A., Anantram, M.P.
Quantum mechanical confinement effects, gate, hand-to-hand and source-to-drain tunnelling will dramatically affect the characteristics of future generation nanometre scaled devices. It has been...
Asenov, A., Balasubramaniam, R., Brown, A.R., Davies, J.H., Saini, S.
In this paper we use 3D simulations to study the amplitudes of random telegraph signals (RTS) associated with the trapping of a single carrier in interface states in the channel of sub 100 nm...
Asenov, A., Slavcheva, G., Brown, A.R., Davies, J.H., Saini, S.
A detailed study of the influence of quantum effects in the inversion layer on the random dopant induced threshold voltage fluctuations and lowering in sub 0.1 micron MOSFETs has been performed. This...
Parallel semiconductor device simulation: from power to 'atomistic' devices
Asenov, A., Brown, A.R., Roy, S.
This paper discusses various aspects of the parallel simulation of semiconductor devices on mesh connected MIMD platforms with distributed memory and a message passing programming paradigm. We...
Several species within the Burkholderia cepacia complex (BCC) have emerged as significant opportunistic pathogens of patients with cystic fibrosis (CF). BCC infection is typically associated with a...
Congestive cardiac failure following laxative withdrawal.
Riley, J. A., Brown, A. R., Walker, B. E.
We report the case of a 60-year-old woman who presented with weakness and hypokalaemia due to excessive use of laxatives. When the laxatives were withdrawn, she developed severe congestive cardiac...