A. Rosenauer

Publication List Details

Period

1998 - 2009

Number

16

Co-Authors

Correlation of the orientation of stacked aragonite platelets in nacre and their connection via mineral bridges (2009)

Gries, K., Kröger, R., Kübel, C., Schowalter, M., Fritz, M., Rosenauer, A.

In this work, we studied the correlation of the orientation of stacked aragonite platelets of Hatiotis laevigata nacre, using selected area diffraction (SAD) in transmission electron microscopy...

Microstructure of aragonite platelets in nacre. (2009)

Kübel, C., Gries, K., Kröger, R., Fritz, M., Rosenauer, A.

Microscopy and Microanalysis 2009, Richmond, Va., July 26-30, 2009

Increase of the mean inner Coulomb potential in Au clusters induced by surface tension and its implication for electron scattering (2007)

Popescu, R., Mueller, E., Wanner, M., Gerthsen, D., Scowalter, M., Rosenauer, A., ...

Electron holography in a transmission electron microscope was applied to measure the phase shift induced by Au clusters as a function of the cluster size. Large phase shifts Df observed for small Au...

Interfacial structure of a-plane GaN grown on r-plane sapphire (2007)

Kroger, R., Paskova, T., Figge, S., Hommel, D., Rosenauer, A., Monemar, B.

The interface between a-plane GaN, grown by metal organic vapor phase epitaxy and hydride vapor phase epitaxy, and r-plane sapphire was investigated by transmission electron microscopy in [1−100]...

Transmission electron microscopy investigation of segregation and critical floating-layer content of indium for island formation in InGaAs (2006)

Litvinov, D., Gerthsen, D., Rosenauer, A., Schowalter, M., Passow, T., Feinaeugle, P., ...

We have investigated InGaAs layers grown by molecular-beam epitaxy on GaAs(001) by transmission electron microscopy (TEM) and photoluminescence spectroscopy. InGaAs layers with In-concentrations of...

Strain state analysis of InGaN/GaN - sources of error and optimized imaging conditions. (2006)

Rosenauer, A., Gerthsen, D., Potin, V.

Transmission electron microscopy investigation of the chemical composition of InxGa1–xN/GaN layers by strain state analysis can lead to substantial artefacts. We evaluated simulated images in...