Improved Spatial Resolution in Thick, Fully-Depleted CCDs with Enhanced Red Sensitivity (2008)
Fairfield, Jessamyn A., Groom, Donald E., Bailey, Stephen J., Bebek, Christopher J., Holland, Stephen E., Karcher, Armin, ...
Radiation Tolerance of Fully-Depleted P-Channel CCDs Designed for the SNAP Satellite (2007)
Dawson, Kyle, Bebek, Chris, Emes, John, Holland, Steve, Jelinsky, Sharon, Karcher, Armin, ...
Thick, fully depleted p-channel charge-coupled devices (CCDs) have been developed at the Lawrence Berkeley National Laboratory (LBNL). These CCDs have several advantages over conventional thin,...
Fabricius, Maximilian H., Bebek, Chris J., Groom, Donald E., Karcher, Armin, Roe, Natalie A.
The usual quantum efficiency (QE) measurement heavily relies on a calibrated photodiode (PD) and the knowledgeof the CCD s gain. Either can introduce significant systematic errors. But reflectivity...
Quantum efficiency characterization of LBNL CCD's Part 1: the Quantum Efficiency Machine (2005)
Groom, Donald E., Bebek, Christopher J., Fabricius, Maximilian, Karcher, Armin, Kolbe, William F., Roe, Natalie A., ...
Instrumentation was developed in 2004 and 2005 to measure the quantum efficiency of the Lawrence Berkeley National Lab (LBNL)total-depletion CCD's, intended for astronomy and space applications. This...
Measurement of lateral charge diffusion in thick, fully depleted, back-illuminated CCDs (2004)
Karcher, Armin, Bebek, Christopher J., Kolbe, William F., Maurath, Dominic, Prasad, Valmiki, Uslenghi, Michela, ...
Lateral charge diffusion in back-illuminated CCDs directly affects the point spread function (PSF) and spatial resolution of an imaging device. This can be of particular concern in thick,...
Fully depleted back-illuminated p-channel CCD development (2003)
Bebek, Chris J., Bercovitz, John H., Groom, Donald E., Holland, Stephen E., Kadel, Richard W., Karcher, Armin, ...
An overview of CCD development efforts at Lawrence Berkeley National Laboratory is presented. Operation of fully-depleted, back-illuminated CCD's fabricated on high resistivity silicon is described,...