De Jaeger, J.C., Delage, S. L., Dambrine, G., Di Forte Poisson, M.A, Hoel, V., Lepilliet, S., ...
This study regards the low noise properties of X-bandGaN-based LNAs as well as its associated robustness. Devices are processed on epilayers grown onSiC or Si substrates. The HEMTs present very low...
Power Performance Evaluation of AlGaN/GaN HEMTs through Load Pull and Pulsed I-V Measurements (2004)
Charbonniaud, C., Gasseling, T., De Meyer, S., Quéré, R., Teyssier, J.P., Barataud, D., ...
A systematic evaluation of power performances of AlGaN/GaN HEMTs has been performed by means of CW on wafer Load Pull measurements at X band. Those measurements have been correlated to the results...
Influence of passivation on High-Power AlGaN/GaN HEMT devices at 10GHz. (2004)
Ducatteau, D., Werquin, M., Gaquière, C., Théron, D., Martin, T., Delos, E., ...
AlGaN/GaN high electron mobility transistors (HEMTS on SiC) were characterized before and after SiO2/Si3N4 passivation. DC, small signal, pulsed and large signal measurements were performed. We...
A new gate process for the realization of lattice - matched HEMT on InP for high yield MMICs (1998)
Hoel, V., Bollaert, S., Wallart, X., Grimbert, B., Lepilliet, S., Cappy, A.
A new gate process for the realization of ultra short gate HEMT on InP is presented. In this technology, the top of the gate is deposited on a Si3N4 layer. This gate process leads to small...