C. Bulutay

Pathways of bond topology transitions at the interface of silicon nanocrystals and amorphous silica matrix (2008)

Yılmaz, D. E., Bulutay, C., Çağın, T.

The interface chemistry of silicon nanocrystals (NCs) embedded in amorphous oxide matrix is studied through molecular dynamics simulations with the chemical environment described by the reactive...

Electronic Structure and Optical Properties of Silicon Nanocrystals along their Aggregation Stages (2008)

Bulutay, C.

The structural control of silicon nanocrystals is an important technological problem. Typically a distribution of nanocrystal sizes and shapes emerges under the uncontrolled aggregation of smaller...

Experimental and theoretical investigations of electronic and atomic structure of Si-nanocrystals formed in sapphire by ion implantation (2008)

Wainstein, D, Kovalev, A, Tetelbaum, D, Mikhailov, A, Bulutay, C, Aydinli, A

The semiconductor nanocomposites based on Si nanocrystals in dielectric matrices attract a great amount of attention due to their ability for luminescence in visible and near-IR part of the...

Auger recombination and carrier multiplication in embedded silicon and germanium nanocrystals (2007)

Sevik, C., Bulutay, C.

For Si and Ge nanocrystals (NCs) embedded in wide band-gap matrices, Auger recombination (AR) and carrier multiplication (CM) lifetimes are computed exactly in a three-dimensional real space grid...

Interband, intraband and excited-state direct photon absorption of silicon and germanium nanocrystals embedded in a wide band-gap lattice (2007)

Bulutay, C.

Embedded Si and Ge nanocrystals (NCs) in wide band-gap matrices are studied theoretically using an atomistic pseudopotential approach. From small clusters to large NCs containing on the order of...

Theoretical study of the insulating oxides and nitrides: SiO2, GeO2, Al2O3, Si3N4, and Ge3N4 (2006)

Sevik, C., Bulutay, C.

An extensive theoretical study is performed for wide bandgap crystalline oxides and nitrides, namely, SiO_{2}, GeO_{2}, Al_{2}O_{3}, Si_{3}N_{4}, and Ge_{3}N_{4}. Their important polymorphs are...

Pseudopotential-based full zone k.p technique for indirect bandgap semiconductors: Si, Ge, diamond and SiC (2006)

Bulutay, C.

The $k \cdot p$ is a versatile technique that describes the semiconductor band structure in the vicinity of the bandgap. The technique can be extended to full Brillouin zone by including more coupled...

High-dielectric constant and wide band gap inverse silver oxide phases of the ordered ternary alloys of SiO$_{2}$, GeO$_{2}$ and SnO$_{2}$ (2006)

Sevik, C., Bulutay, C.

High-dielectric constant and wide band gap oxides have important technological applications. The crystalline oxide polymorphs having lattice constant compatibility to silicon are particularly...

The effect of valley-spin degeneracy on the screening of charged impurity centers in two- and three-dimensional electronic devices (1997)

Bulutay, C., Al-Hayek, I., Tomak, M.

Accurate characterization of charged impurity centers is of importance for the electronic devices and materials. The role of valley-spin degeneracy on the screening of an attractive ion by the mobile...

Valley Phase Transition in Si MOSFETs (1997)

Bulutay, C., Tomak, M.

We draw attention to the past literature on valley phase transition in Si(100) MOSFETs. The recent experiments performed by Kravchenko and co-workers indicating metal-insulator transition in Si...

Dielectric Properties of the Quasi-Two-Dimensional Electron Liquid in Heterojunctions (1996)

Bulutay, C., Tomak, M.

A quasi-two-dimensional (Q2D) electron liquid (EL) is formed at the interface of a semiconductor heterojunction. For an accurate characterization of the Q2D EL, many-body effects need to be taken...